Epiel" company, the only enterprise in Russia producing epitaxial structures, became the participant of the V International Forum "Microelectronics-2019" which was held on September 30 - October 5 in Alushta, Crimea.

During the forum representatives of "Epiel" delivered the reports "The formation of AlN transition layer on 3C-SiC/Si(111) templates using ammonia molecular beam epitaxy method" and "Influence of solid-phase recrystallization with double implantation on the density of structural defects in ultrathin silicon layers on sapphire". The reports are a part of a large-scale project of "Epiel" JSC which participates in the consortium on development of technology for epitaxial structures production on the basis of gallium nitride.

Microelectronics Forum is a major communication platform for discussing latest technological and market trends in the field of electronics. During four years of successful work the event has brought together more than 1 thousand participants and 400 companies from Russia, Belarus, Armenia, China and the USA. Its organizers are NIIMA Progress JSC, NIIME JSC and NRU MIET. The event was supported by the Russian Ministry of Industry and Trade, Russian Engineering Union, Rostec State Corporation, Roselektronika, and the Skolkovo Foundation.

About Company

Epiel is the only company in Russia specialized in epitaxial structures production based on silicon and sapphire for a wide range of semiconductor devices including integrated circuits, discrete power devices and many other electronic components.

Modern epitaxial structures are the product of advanced engineering and high technologies. Silicon epitaxial structure is a thin, round wafer of high-purity monocrystalline silicon with an ultra-thin epitaxial layer of monocrystalline silicon deposited on its surface.

Silicon epitaxial structures are at the base of the pyramid upon which modern radioelectronics is built as they represent the basic material for production of a wide range of electronic components used in civil, military and space electronics.

For more than 20 years Epiel has been successfully meeting the demand of the national and international electronics industry for epitaxial structures. The company's products are used by more than 50 electronic companies all over Russia.

Production

Today "Epiel" produces world-class silicon epitaxial structures of 100, 150 and 200mm diameter that are supplied to such leading microelectronic companies as "Mikron" and "Angstrem" of our country and also abroad.

Further on the basis of these structures microcircuits are produced that are used in electronic devices for both consumer and special purposes. For example, integrated circuits produced at Mikron are used in contactless RFID tickets for Moscow's transport network.

To meet the needs of almost all domestic consumers is an extremely difficult task, because it requires a wide range of technological capabilities. Having more than 30 years of experience in silicon epitaxy, specialists of the company have developed a number of technological processes that enable to produce both standard and non-standard epitaxial structures in a wide range of parameters. The combination of high scientific potential and broad production opportunities makes "Epiel" a unique company in its sphere not only in Russia but also in the world.

Epitaxial structures "Silicon on Sapphire" (SOS) are one of the unique and promising products of the company. The peculiarity of these structures is that silicon epitaxial layer is deposited on sapphire substrate which is an insulator.

CNS structures are used in the production of electronic components for civil, military and space applications. In particular, they serve as the basis for radiation-resistant integrated circuits that are used in electronic systems of space equipment and nuclear power plants, as well as in communication devices, optoelectronics and special application electronics.

Moreover, Epiel takes part in consortium for development of epitaxial structures production technology based on gallium nitride (GaN). Power GaN transistors can be used in voltage pulse converters, uninterruptible power supplies, solar power plants and wind generators and in transportation. A special field of application is hybrid and electric vehicles.

Innovative development

"Epiel" considers constant innovations aimed at quality improvement and development of new epitaxial structures to be its main strategic orientation as well as the development of new types of epitaxial structures to be ahead of future development plans of domestic consumers.

Over the past five years the company made a new breakthrough in its development having implemented the project of a new production area equipped with the high-class facilities. Implementation of the project required significant investments in equipment, clean room and infrastructure. This project, unique in Russia, is of particular importance for the domestic electronics industry as it lays a solid foundation for its further development.